Wai Tung Ng (M’90, SM’04) received his B.A.Sc., M.A.Sc., and Ph.D. degrees in Electrical Engineering from the University of Toronto, in 1983, 1985 and 1990, respectively. Prof. Ng is with the Edward S. Rogers Sr. Dept. of Electrical and Computer Engineering from the University of Toronto. He is also the director for the Toronto Nanofabrication Center (TNFC), and open access research facility. Prof. Ng is a recognized researcher in the areas of power semiconductor devices and smart power integrated circuits. His research group has demonstrated many world-first innovative designs, including a digitally reconfigurable DC-DC power converter with resizable output stage [ISPSD 2006], a superjunction power FinFET [IEDM 2010], and a series of smart gate driver integrated circuits for Insulated Gate Bipolar Transistors (IGBTs) and Gallium Nitride (GaN) power transistors. Currently, Prof. Ng’s group is actively engaged in the promotion of digitally reconfigurable gate driver circuits to improve the switching characteristics of GaN and Silicon Carbide (SiC) power transistors. These include many novel features such as one-step dead-time correction, indirect current sensing, dynamic driving strength to suppress Electromagnetic Interference (EMI), liquid-cooled packaging for intelligent power modules (IPMs), etc.

吴伟东分别于1983年、1985年和1990年在多伦多大学获得电气工程学士、硕士、博士学位。吴教授目前就职于多伦多大学电气与计算机工程系，他还是多伦多纳米制造中心（TNFC）和开放获取研究机构的主任。吴教授是功率半导体器件和智能功率集成电路领域的知名研究员。他的研究小组展示了许多世界首创的创新设计，包括具有可调整输出级的数字可重新配置DC-DC功率转换器[IISPSD 2006]、超结功率FinFET[IEDM 2010]，以及一系列用于绝缘栅双极晶体管（IGBT）和氮化镓功率晶体管的智能栅极驱动器集成电路。目前，吴教授的团队正在积极推广数字可重构栅极驱动电路，以改善GaN和碳化硅（SiC）功率晶体管的开关特性。其中包括许多新颖的功能，如一步空载校正、间接电流传感、抑制电磁干扰的动态驱动强度、智能电源模块的液冷封装等。